Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget

Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget

10.1109/LED.2007.906814

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Bibliographic Details
Main Authors: Loh, W.Y., Wang, J., Ye, J.D., Yang, R., Nguyen, H.S., Chua, K.T., Song, J.F., Loh, T.H., Xiong, Y.Z., Lee, S.J., Yu, M.B., Lo, G.Q., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge-on-silicon
Heterojunctions
Near-infrared
Optical communications
Photodetector
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82497
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82497

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