In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression

In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression

10.1143/JJAP.51.02BF03

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Main Authors: Zhu, Z., Gong, X., Ivana, Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82518
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-825182023-10-29T22:37:58Z In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression Zhu, Z. Gong, X. Ivana Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1143/JJAP.51.02BF03 Japanese Journal of Applied Physics 51 2 PART 2 - 2014-10-07T04:30:19Z 2014-10-07T04:30:19Z 2012-02 Article Zhu, Z., Gong, X., Ivana, Yeo, Y.-C. (2012-02). In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF03 00214922 http://scholarbank.nus.edu.sg/handle/10635/82518 000303481400045 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1143/JJAP.51.02BF03
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Zhu, Z.
Gong, X.
Ivana
Yeo, Y.-C.
format Article
author Zhu, Z.
Gong, X.
Ivana
Yeo, Y.-C.
spellingShingle Zhu, Z.
Gong, X.
Ivana
Yeo, Y.-C.
In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
author_sort Zhu, Z.
title In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
title_short In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
title_full In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
title_fullStr In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
title_full_unstemmed In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
title_sort in 0.53ga 0.47as n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset n + doped regions for leakage suppression
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82518
_version_ 1781784160804798464

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