Influence of GaNAs strain-compensation layers on the optical properties of Galn(N)As/GaAs quantum wells upon annealing

10.1063/1.2178399

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Bibliographic Details
Main Authors: Liu, H.F., Xiang, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82532
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Institution: National University of Singapore
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