Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation
10.1109/LED.2005.845501
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sg-nus-scholar.10635-826162015-01-08T02:38:11Z Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation Tan, C.F. Chor, E.F. Lee, H. Liu, J. Quek, E. Chan, L. ELECTRICAL & COMPUTER ENGINEERING Carbon Junction leakage Solid-phase epitaxy re-growth (SPER) 10.1109/LED.2005.845501 IEEE Electron Device Letters 26 4 252-254 EDLED 2014-10-07T04:31:29Z 2014-10-07T04:31:29Z 2005-04 Article Tan, C.F.,Chor, E.F.,Lee, H.,Liu, J.,Quek, E.,Chan, L. (2005-04). Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation. IEEE Electron Device Letters 26 (4) : 252-254. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/LED.2005.845501" target="_blank">https://doi.org/10.1109/LED.2005.845501</a> 07413106 http://scholarbank.nus.edu.sg/handle/10635/82616 NOT_IN_WOS Scopus |
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Carbon Junction leakage Solid-phase epitaxy re-growth (SPER) |
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Carbon Junction leakage Solid-phase epitaxy re-growth (SPER) Tan, C.F. Chor, E.F. Lee, H. Liu, J. Quek, E. Chan, L. Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation |
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10.1109/LED.2005.845501 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Tan, C.F. Chor, E.F. Lee, H. Liu, J. Quek, E. Chan, L. |
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Article |
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Tan, C.F. Chor, E.F. Lee, H. Liu, J. Quek, E. Chan, L. |
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Tan, C.F. |
title |
Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation |
title_short |
Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation |
title_full |
Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation |
title_fullStr |
Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation |
title_full_unstemmed |
Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation |
title_sort |
leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon si1-ycy incorporation |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/82616 |
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1681089284960944128 |