Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon

10.1016/j.tsf.2005.09.157

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Bibliographic Details
Main Authors: Tan, C.F., Chor, E.F., Lee, H., Liu, J., Quek, E., Chan, L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
End-of-range
Indium
Solid phase epitaxial regrowth
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83603
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83603

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