Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

10.1149/1.3559754

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Bibliographic Details
Main Authors: Zhang, X., Guo, H., Lin, H.-Y., Ivana, Gong, X., Zhou, Q., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82972
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Institution: National University of Singapore
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Summary:10.1149/1.3559754

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