Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

10.1149/1.3559754

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Main Authors:	Zhang, X., Guo, H., Lin, H.-Y., Ivana, Gong, X., Zhou, Q., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82972
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82972
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spelling	sg-nus-scholar.10635-829722023-10-29T20:45:05Z Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization Zhang, X. Guo, H. Lin, H.-Y. Ivana Gong, X. Zhou, Q. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3559754 Electrochemical and Solid-State Letters 14 5 H212-H214 ESLEF 2014-10-07T04:35:42Z 2014-10-07T04:35:42Z 2011 Article Zhang, X., Guo, H., Lin, H.-Y., Ivana, Gong, X., Zhou, Q., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization. Electrochemical and Solid-State Letters 14 (5) : H212-H214. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3559754 10990062 http://scholarbank.nus.edu.sg/handle/10635/82972 000288128800028 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.3559754
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, X. Guo, H. Lin, H.-Y. Ivana Gong, X. Zhou, Q. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
format	Article
author	Zhang, X. Guo, H. Lin, H.-Y. Ivana Gong, X. Zhou, Q. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
spellingShingle	Zhang, X. Guo, H. Lin, H.-Y. Ivana Gong, X. Zhou, Q. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C. Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
author_sort	Zhang, X.
title	Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
title_short	Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
title_full	Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
title_fullStr	Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
title_full_unstemmed	Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
title_sort	reduction of off-state leakage current in in0.7ga 0.3as channel n-mosfets with self-aligned ni-ingaas contact metallization
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82972
_version_	1781784264593899520

Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

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