Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement

Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement

10.1149/1.3526139

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Bibliographic Details
Main Authors: Gong, X., Ivana, Chin, H.-C., Zhu, Z., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83004
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83004

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