Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement

• Main Authors: Gong, X., Ivana, Chin, H.-C., Zhu, Z., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83004
• Institution: National University of Singapore

10.1149/1.3526139