Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs

10.1109/LED.2008.2010831

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Main Authors: Chin, H.-C., Zhu, M., Liu, X., Lee, H.-K., Shi, L., Tan, L.-S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/83019
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spelling sg-nus-scholar.10635-830192023-10-29T20:23:42Z Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs Chin, H.-C. Zhu, M. Liu, X. Lee, H.-K. Shi, L. Tan, L.-S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING GaAs High mobility High-k MOSFET Surface passivation 10.1109/LED.2008.2010831 IEEE Electron Device Letters 30 2 110-112 EDLED 2014-10-07T04:36:16Z 2014-10-07T04:36:16Z 2009 Article Chin, H.-C., Zhu, M., Liu, X., Lee, H.-K., Shi, L., Tan, L.-S., Yeo, Y.-C. (2009). Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs. IEEE Electron Device Letters 30 (2) : 110-112. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2010831 07413106 http://scholarbank.nus.edu.sg/handle/10635/83019 000262861600005 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic GaAs
High mobility
High-k
MOSFET
Surface passivation
spellingShingle GaAs
High mobility
High-k
MOSFET
Surface passivation
Chin, H.-C.
Zhu, M.
Liu, X.
Lee, H.-K.
Shi, L.
Tan, L.-S.
Yeo, Y.-C.
Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
description 10.1109/LED.2008.2010831
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chin, H.-C.
Zhu, M.
Liu, X.
Lee, H.-K.
Shi, L.
Tan, L.-S.
Yeo, Y.-C.
format Article
author Chin, H.-C.
Zhu, M.
Liu, X.
Lee, H.-K.
Shi, L.
Tan, L.-S.
Yeo, Y.-C.
author_sort Chin, H.-C.
title Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
title_short Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
title_full Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
title_fullStr Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
title_full_unstemmed Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
title_sort silane-ammonia surface passivation for gallium arsenide surface-channel n-mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83019
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