Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs
10.1149/1.3090178
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83021 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-83021 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-830212024-11-09T07:32:25Z Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs Koh, S.-M. Wang, X. Sekar, K. Krull, W. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3090178 Journal of the Electrochemical Society 156 5 H361-H366 JESOA 2014-10-07T04:36:18Z 2014-10-07T04:36:18Z 2009 Article Koh, S.-M., Wang, X., Sekar, K., Krull, W., Samudra, G.S., Yeo, Y.-C. (2009). Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs. Journal of the Electrochemical Society 156 (5) : H361-H366. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3090178 00134651 http://scholarbank.nus.edu.sg/handle/10635/83021 000264780400056 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1149/1.3090178 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Wang, X. Sekar, K. Krull, W. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Koh, S.-M. Wang, X. Sekar, K. Krull, W. Samudra, G.S. Yeo, Y.-C. |
| spellingShingle |
Koh, S.-M. Wang, X. Sekar, K. Krull, W. Samudra, G.S. Yeo, Y.-C. Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs |
| author_sort |
Koh, S.-M. |
| title |
Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs |
| title_short |
Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs |
| title_full |
Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs |
| title_fullStr |
Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs |
| title_full_unstemmed |
Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs |
| title_sort |
silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel mosfets |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83021 |
| _version_ |
1821201552064380928 |