Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
10.1109/LED.2005.856708
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sg-nus-scholar.10635-832592023-10-30T20:09:33Z Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C. ELECTRICAL & COMPUTER ENGINEERING Capacitor RF metal-insulator-metal (MIM) TaTiO 10.1109/LED.2005.856708 IEEE Electron Device Letters 26 10 728-730 EDLED 2014-10-07T04:39:10Z 2014-10-07T04:39:10Z 2005-10 Article Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708 07413106 http://scholarbank.nus.edu.sg/handle/10635/83259 000232208700010 Scopus |
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Capacitor RF metal-insulator-metal (MIM) TaTiO |
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Capacitor RF metal-insulator-metal (MIM) TaTiO Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C. Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric |
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10.1109/LED.2005.856708 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C. |
format |
Article |
author |
Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C. |
author_sort |
Chiang, K.C. |
title |
Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric |
title_short |
Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric |
title_full |
Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric |
title_fullStr |
Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric |
title_full_unstemmed |
Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric |
title_sort |
very high-density (23 ff/μm2) rf mim capacitors using high-κ tatio as the dielectric |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/83259 |
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1781784344698814464 |