Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

10.1109/LED.2005.856708

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Main Authors: Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/83259
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-832592023-10-30T20:09:33Z Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C. ELECTRICAL & COMPUTER ENGINEERING Capacitor RF metal-insulator-metal (MIM) TaTiO 10.1109/LED.2005.856708 IEEE Electron Device Letters 26 10 728-730 EDLED 2014-10-07T04:39:10Z 2014-10-07T04:39:10Z 2005-10 Article Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708 07413106 http://scholarbank.nus.edu.sg/handle/10635/83259 000232208700010 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Capacitor
RF metal-insulator-metal (MIM)
TaTiO
spellingShingle Capacitor
RF metal-insulator-metal (MIM)
TaTiO
Chiang, K.C.
Lai, C.H.
Chin, A.
Wang, T.J.
Chiu, H.F.
Chen, J.-R.
McAlister, S.P.
Chi, C.C.
Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
description 10.1109/LED.2005.856708
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chiang, K.C.
Lai, C.H.
Chin, A.
Wang, T.J.
Chiu, H.F.
Chen, J.-R.
McAlister, S.P.
Chi, C.C.
format Article
author Chiang, K.C.
Lai, C.H.
Chin, A.
Wang, T.J.
Chiu, H.F.
Chen, J.-R.
McAlister, S.P.
Chi, C.C.
author_sort Chiang, K.C.
title Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
title_short Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
title_full Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
title_fullStr Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
title_full_unstemmed Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
title_sort very high-density (23 ff/μm2) rf mim capacitors using high-κ tatio as the dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83259
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