Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

• Main Authors: Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Capacitor; RF metal-insulator-metal (MIM); TaTiO
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83259
• Institution: National University of Singapore

10.1109/LED.2005.856708