100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

10.1109/IPFA.2006.251052

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Bibliographic Details
Main Authors:	Gao, F., Balakumar, S., Rui, L., Lee, S.J., Tung, C.-H., Du, A., Sudhiranjan, T., Hwang, W.S., Balasubramanian, N., Lo, P., Dong-Zhi, C., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83288
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83288
record_format	dspace
spelling	sg-nus-scholar.10635-832882015-01-27T13:25:31Z 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach Gao, F. Balakumar, S. Rui, L. Lee, S.J. Tung, C.-H. Du, A. Sudhiranjan, T. Hwang, W.S. Balasubramanian, N. Lo, P. Dong-Zhi, C. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IPFA.2006.251052 Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 311-313 2014-10-07T04:39:32Z 2014-10-07T04:39:32Z 2006 Conference Paper Gao, F.,Balakumar, S.,Rui, L.,Lee, S.J.,Tung, C.-H.,Du, A.,Sudhiranjan, T.,Hwang, W.S.,Balasubramanian, N.,Lo, P.,Dong-Zhi, C.,Kwong, D.-L. (2006). 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 311-313. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2006.251052" target="_blank">https://doi.org/10.1109/IPFA.2006.251052</a> 1424402069 http://scholarbank.nus.edu.sg/handle/10635/83288 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IPFA.2006.251052
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gao, F. Balakumar, S. Rui, L. Lee, S.J. Tung, C.-H. Du, A. Sudhiranjan, T. Hwang, W.S. Balasubramanian, N. Lo, P. Dong-Zhi, C. Kwong, D.-L.
format	Conference or Workshop Item
author	Gao, F. Balakumar, S. Rui, L. Lee, S.J. Tung, C.-H. Du, A. Sudhiranjan, T. Hwang, W.S. Balasubramanian, N. Lo, P. Dong-Zhi, C. Kwong, D.-L.
spellingShingle	Gao, F. Balakumar, S. Rui, L. Lee, S.J. Tung, C.-H. Du, A. Sudhiranjan, T. Hwang, W.S. Balasubramanian, N. Lo, P. Dong-Zhi, C. Kwong, D.-L. 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
author_sort	Gao, F.
title	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
title_short	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
title_full	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
title_fullStr	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
title_full_unstemmed	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
title_sort	100 nm gate length pt-germanosilicide schottky s/d pmosfet on sgoi substrate fabricated by novel condensation approach
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83288
_version_	1681089408215810048

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

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