100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

• Main Authors: Gao, F., Balakumar, S., Rui, L., Lee, S.J., Tung, C.-H., Du, A., Sudhiranjan, T., Hwang, W.S., Balasubramanian, N., Lo, P., Dong-Zhi, C., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83288
• Institution: National University of Singapore

10.1109/IPFA.2006.251052