A robust and accurate drain current I-V model for MESFET

Asia-Pacific Microwave Conference Proceedings, APMC

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Bibliographic Details
Main Authors: Ooi, B.L., Ma, J.Y., Leong, M.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83418
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-834182015-01-07T15:58:40Z A robust and accurate drain current I-V model for MESFET Ooi, B.L. Ma, J.Y. Leong, M.S. ELECTRICAL & COMPUTER ENGINEERING Asia-Pacific Microwave Conference Proceedings, APMC 1 236-239 2014-10-07T04:41:01Z 2014-10-07T04:41:01Z 2001 Conference Paper Ooi, B.L.,Ma, J.Y.,Leong, M.S. (2001). A robust and accurate drain current I-V model for MESFET. Asia-Pacific Microwave Conference Proceedings, APMC 1 : 236-239. ScholarBank@NUS Repository. 0780371380 http://scholarbank.nus.edu.sg/handle/10635/83418 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Asia-Pacific Microwave Conference Proceedings, APMC
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Ooi, B.L.
Ma, J.Y.
Leong, M.S.
format Conference or Workshop Item
author Ooi, B.L.
Ma, J.Y.
Leong, M.S.
spellingShingle Ooi, B.L.
Ma, J.Y.
Leong, M.S.
A robust and accurate drain current I-V model for MESFET
author_sort Ooi, B.L.
title A robust and accurate drain current I-V model for MESFET
title_short A robust and accurate drain current I-V model for MESFET
title_full A robust and accurate drain current I-V model for MESFET
title_fullStr A robust and accurate drain current I-V model for MESFET
title_full_unstemmed A robust and accurate drain current I-V model for MESFET
title_sort robust and accurate drain current i-v model for mesfet
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83418
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