Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm
Materials Research Society Symposium Proceedings
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2014
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sg-nus-scholar.10635-836082015-01-06T04:57:34Z Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm Lin, F. Xiang, N. Wang, X.C. Arokiaraj, J. Liu, W. Liu, H.F. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING Materials Research Society Symposium Proceedings 955 348-353 MRSPD 2014-10-07T04:43:08Z 2014-10-07T04:43:08Z 2006 Conference Paper Lin, F.,Xiang, N.,Wang, X.C.,Arokiaraj, J.,Liu, W.,Liu, H.F.,Chua, S.J. (2006). Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm. Materials Research Society Symposium Proceedings 955 : 348-353. ScholarBank@NUS Repository. 9781604234114 02729172 http://scholarbank.nus.edu.sg/handle/10635/83608 NOT_IN_WOS Scopus |
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National University of Singapore |
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NUS Library |
| country |
Singapore |
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ScholarBank@NUS |
| description |
Materials Research Society Symposium Proceedings |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Lin, F. Xiang, N. Wang, X.C. Arokiaraj, J. Liu, W. Liu, H.F. Chua, S.J. |
| format |
Conference or Workshop Item |
| author |
Lin, F. Xiang, N. Wang, X.C. Arokiaraj, J. Liu, W. Liu, H.F. Chua, S.J. |
| spellingShingle |
Lin, F. Xiang, N. Wang, X.C. Arokiaraj, J. Liu, W. Liu, H.F. Chua, S.J. Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm |
| author_sort |
Lin, F. |
| title |
Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm |
| title_short |
Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm |
| title_full |
Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm |
| title_fullStr |
Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm |
| title_full_unstemmed |
Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm |
| title_sort |
design and optimization of gan-based semiconductor saturable absorber mirror operating at around 415 nm |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83608 |
| _version_ |
1681089467273707520 |