Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing

Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing

Materials Research Society Symposium Proceedings

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Tung, C.-H., Foo, Y.-L., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83727
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Institution: National University of Singapore
Description
Summary:Materials Research Society Symposium Proceedings

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