Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing

Materials Research Society Symposium Proceedings

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Main Authors:	Wang, G.H., Toh, E.-H., Tung, C.-H., Foo, Y.-L., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83727
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83727
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spelling	sg-nus-scholar.10635-837272015-01-07T13:36:19Z Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing Wang, G.H. Toh, E.-H. Tung, C.-H. Foo, Y.-L. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Materials Research Society Symposium Proceedings 994 245-250 MRSPD 2014-10-07T04:44:29Z 2014-10-07T04:44:29Z 2007 Conference Paper Wang, G.H.,Toh, E.-H.,Tung, C.-H.,Foo, Y.-L.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing. Materials Research Society Symposium Proceedings 994 : 245-250. ScholarBank@NUS Repository. 9781558999541 02729172 http://scholarbank.nus.edu.sg/handle/10635/83727 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Materials Research Society Symposium Proceedings
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Tung, C.-H. Foo, Y.-L. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, G.H. Toh, E.-H. Tung, C.-H. Foo, Y.-L. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
spellingShingle	Wang, G.H. Toh, E.-H. Tung, C.-H. Foo, Y.-L. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
author_sort	Wang, G.H.
title	Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
title_short	Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
title_full	Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
title_fullStr	Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
title_full_unstemmed	Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
title_sort	fabrication of strain relaxed silicon-germanium-on-insulator (si 0.35ge0.65oi) wafers using cyclical thermal oxidation and annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83727
_version_	1681089489202577408

Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing

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