Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs

• Main Authors: Huang, C.H., Yu, D.S., Chin, A., Wu, C.H., Chen, W.J., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83748
• Institution: National University of Singapore

Technical Digest - International Electron Devices Meeting