Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs
Technical Digest - International Electron Devices Meeting
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Main Authors: | Huang, C.H., Yu, D.S., Chin, A., Wu, C.H., Chen, W.J., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83748 |
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Institution: | National University of Singapore |
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