Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs

Technical Digest - International Electron Devices Meeting

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Bibliographic Details
Main Authors: Huang, C.H., Yu, D.S., Chin, A., Wu, C.H., Chen, W.J., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83748
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Institution: National University of Singapore

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