Improved NiSi salicide process using presilicide N2 + implant for MOSFETs

10.1109/55.887467

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Bibliographic Details
Main Authors: Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80577
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Institution: National University of Singapore