Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
10.1109/55.887467
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sg-nus-scholar.10635-805772024-11-13T00:36:46Z Improved NiSi salicide process using presilicide N2 + implant for MOSFETs Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Wee, A.T.S. Chan, L. ELECTRICAL ENGINEERING PHYSICS MATERIALS SCIENCE 10.1109/55.887467 IEEE Electron Device Letters 21 12 566-568 EDLED 2014-10-07T02:59:02Z 2014-10-07T02:59:02Z 2000-12 Article Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. (2000-12). Improved NiSi salicide process using presilicide N2 + implant for MOSFETs. IEEE Electron Device Letters 21 (12) : 566-568. ScholarBank@NUS Repository. https://doi.org/10.1109/55.887467 07413106 http://scholarbank.nus.edu.sg/handle/10635/80577 000165684000007 Scopus |
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10.1109/55.887467 |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Wee, A.T.S. Chan, L. |
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Article |
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Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Wee, A.T.S. Chan, L. |
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Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Wee, A.T.S. Chan, L. Improved NiSi salicide process using presilicide N2 + implant for MOSFETs |
author_sort |
Lee, P.S. |
title |
Improved NiSi salicide process using presilicide N2 + implant for MOSFETs |
title_short |
Improved NiSi salicide process using presilicide N2 + implant for MOSFETs |
title_full |
Improved NiSi salicide process using presilicide N2 + implant for MOSFETs |
title_fullStr |
Improved NiSi salicide process using presilicide N2 + implant for MOSFETs |
title_full_unstemmed |
Improved NiSi salicide process using presilicide N2 + implant for MOSFETs |
title_sort |
improved nisi salicide process using presilicide n2 + implant for mosfets |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/80577 |
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1821207437080788992 |