Improved NiSi salicide process using presilicide N2 + implant for MOSFETs

10.1109/55.887467

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Main Authors: Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80577
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-805772024-11-13T00:36:46Z Improved NiSi salicide process using presilicide N2 + implant for MOSFETs Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Wee, A.T.S. Chan, L. ELECTRICAL ENGINEERING PHYSICS MATERIALS SCIENCE 10.1109/55.887467 IEEE Electron Device Letters 21 12 566-568 EDLED 2014-10-07T02:59:02Z 2014-10-07T02:59:02Z 2000-12 Article Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. (2000-12). Improved NiSi salicide process using presilicide N2 + implant for MOSFETs. IEEE Electron Device Letters 21 (12) : 566-568. ScholarBank@NUS Repository. https://doi.org/10.1109/55.887467 07413106 http://scholarbank.nus.edu.sg/handle/10635/80577 000165684000007 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/55.887467
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lee, P.S.
Pey, K.L.
Mangelinck, D.
Ding, J.
Wee, A.T.S.
Chan, L.
format Article
author Lee, P.S.
Pey, K.L.
Mangelinck, D.
Ding, J.
Wee, A.T.S.
Chan, L.
spellingShingle Lee, P.S.
Pey, K.L.
Mangelinck, D.
Ding, J.
Wee, A.T.S.
Chan, L.
Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
author_sort Lee, P.S.
title Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
title_short Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
title_full Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
title_fullStr Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
title_full_unstemmed Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
title_sort improved nisi salicide process using presilicide n2 + implant for mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80577
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