Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
10.1109/55.887467
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Main Authors: | Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80577 |
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Institution: | National University of Singapore |
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