Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology

Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology

10.1117/12.280547

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Bibliographic Details
Main Authors: Ho, C.S., Pey, K.L., Wong, H., Karunasirf, R.P.G., Chua, S.J., Lee, K.H., Tang, Y., Wong, S.M., Chan, L.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Amorphization
Amorphous silicon
Argon
Arsenic
CMOS technology
Junction leakage
Nitrogen
SALICIDE
Sheet resistivity
Titanium silicide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81402
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81402

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