Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology

10.1117/12.280547

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Bibliographic Details
Main Authors:	Ho, C.S., Pey, K.L., Wong, H., Karunasirf, R.P.G., Chua, S.J., Lee, K.H., Tang, Y., Wong, S.M., Chan, L.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Amorphization Amorphous silicon Argon Arsenic CMOS technology Junction leakage Nitrogen SALICIDE Sheet resistivity Titanium silicide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81402
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81402
record_format	dspace
spelling	sg-nus-scholar.10635-814022023-10-26T21:29:13Z Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology Ho, C.S. Pey, K.L. Wong, H. Karunasirf, R.P.G. Chua, S.J. Lee, K.H. Tang, Y. Wong, S.M. Chan, L.H. ELECTRICAL ENGINEERING Amorphization Amorphous silicon Argon Arsenic CMOS technology Junction leakage Nitrogen SALICIDE Sheet resistivity Titanium silicide 10.1117/12.280547 Proceedings of SPIE - The International Society for Optical Engineering 3183 243-254 PSISD 2014-10-07T03:07:56Z 2014-10-07T03:07:56Z 1997 Conference Paper Ho, C.S., Pey, K.L., Wong, H., Karunasirf, R.P.G., Chua, S.J., Lee, K.H., Tang, Y., Wong, S.M., Chan, L.H. (1997). Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology. Proceedings of SPIE - The International Society for Optical Engineering 3183 : 243-254. ScholarBank@NUS Repository. https://doi.org/10.1117/12.280547 0277786X http://scholarbank.nus.edu.sg/handle/10635/81402 A1997BJ57L00026 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Amorphization Amorphous silicon Argon Arsenic CMOS technology Junction leakage Nitrogen SALICIDE Sheet resistivity Titanium silicide
spellingShingle	Amorphization Amorphous silicon Argon Arsenic CMOS technology Junction leakage Nitrogen SALICIDE Sheet resistivity Titanium silicide Ho, C.S. Pey, K.L. Wong, H. Karunasirf, R.P.G. Chua, S.J. Lee, K.H. Tang, Y. Wong, S.M. Chan, L.H. Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
description	10.1117/12.280547
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ho, C.S. Pey, K.L. Wong, H. Karunasirf, R.P.G. Chua, S.J. Lee, K.H. Tang, Y. Wong, S.M. Chan, L.H.
format	Conference or Workshop Item
author	Ho, C.S. Pey, K.L. Wong, H. Karunasirf, R.P.G. Chua, S.J. Lee, K.H. Tang, Y. Wong, S.M. Chan, L.H.
author_sort	Ho, C.S.
title	Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
title_short	Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
title_full	Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
title_fullStr	Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
title_full_unstemmed	Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
title_sort	effect of argon or nitrogen pre-amorphized implant on salicide formation for deep sub-micron cmos technology
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81402
_version_	1781783986511544320

Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology

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