Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
10.1117/12.280547
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Main Authors: | Ho, C.S., Pey, K.L., Wong, H., Karunasirf, R.P.G., Chua, S.J., Lee, K.H., Tang, Y., Wong, S.M., Chan, L.H. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81402 |
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Institution: | National University of Singapore |
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