Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology

• Main Authors: Ho, C.S., Pey, K.L., Wong, H., Karunasirf, R.P.G., Chua, S.J., Lee, K.H., Tang, Y., Wong, S.M., Chan, L.H.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Amorphization; Amorphous silicon; Argon; Arsenic; CMOS technology; Junction leakage; Nitrogen; SALICIDE; Sheet resistivity; Titanium silicide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81402
• Institution: National University of Singapore

10.1117/12.280547