High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

10.1109/IEDM.2007.4419049

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Main Authors:	Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H.R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M.M., Smith, C., Banerjee, S., Tsai, W., Thompson, S.E., Tseng, H.H., Jammy, R.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83787
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83787
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spelling	sg-nus-scholar.10635-837872023-10-25T07:35:41Z High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node Suthram, S. Majhi, P. Sun, G. Kalra, P. Harris, H.R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Hussain, M.M. Smith, C. Banerjee, S. Tsai, W. Thompson, S.E. Tseng, H.H. Jammy, R. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2007.4419049 Technical Digest - International Electron Devices Meeting, IEDM 727-730 TDIMD 2014-10-07T04:45:11Z 2014-10-07T04:45:11Z 2007 Conference Paper Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H.R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M.M., Smith, C., Banerjee, S., Tsai, W., Thompson, S.E., Tseng, H.H., Jammy, R. (2007). High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node. Technical Digest - International Electron Devices Meeting, IEDM : 727-730. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4419049 01631918 http://scholarbank.nus.edu.sg/handle/10635/83787 000259347800166 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2007.4419049
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Suthram, S. Majhi, P. Sun, G. Kalra, P. Harris, H.R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Hussain, M.M. Smith, C. Banerjee, S. Tsai, W. Thompson, S.E. Tseng, H.H. Jammy, R.
format	Conference or Workshop Item
author	Suthram, S. Majhi, P. Sun, G. Kalra, P. Harris, H.R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Hussain, M.M. Smith, C. Banerjee, S. Tsai, W. Thompson, S.E. Tseng, H.H. Jammy, R.
spellingShingle	Suthram, S. Majhi, P. Sun, G. Kalra, P. Harris, H.R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Hussain, M.M. Smith, C. Banerjee, S. Tsai, W. Thompson, S.E. Tseng, H.H. Jammy, R. High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
author_sort	Suthram, S.
title	High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
title_short	High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
title_full	High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
title_fullStr	High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
title_full_unstemmed	High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
title_sort	high performance pmosfets using si/si1-xgex/si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83787
_version_	1781784390737592320

High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

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