High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Ng, T.H., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83797
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Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting, IEDM

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