High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation
Technical Digest - International Electron Devices Meeting, IEDM
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Main Authors: | Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Ng, T.H., Cho, B.J. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83797 |
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Institution: | National University of Singapore |
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