In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process

10.1109/VTSA.2011.5872217

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Bibliographic Details
Main Authors:	Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, H.-Y., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83839
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83839
record_format	dspace
spelling	sg-nus-scholar.10635-838392024-11-10T04:42:37Z In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, H.-Y. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2011.5872217 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 26-27 2014-10-07T04:45:47Z 2014-10-07T04:45:47Z 2011 Conference Paper Zhang, X.,Guo, H.,Gong, X.,Zhou, Q.,Lin, H.-Y.,Lin, Y.-R.,Ko, C.-H.,Wann, C.H.,Yeo, Y.-C. (2011). In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 26-27. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2011.5872217" target="_blank">https://doi.org/10.1109/VTSA.2011.5872217</a> 9781424484928 http://scholarbank.nus.edu.sg/handle/10635/83839 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/VTSA.2011.5872217
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, H.-Y. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
format	Conference or Workshop Item
author	Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, H.-Y. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
spellingShingle	Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, H.-Y. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C. In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
author_sort	Zhang, X.
title	In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
title_short	In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
title_full	In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
title_fullStr	In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
title_full_unstemmed	In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
title_sort	in0.7ga0.3as channel n-mosfets with a novel self-aligned ni-ingaas contact formed using a salicide-like metallization process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83839
_version_	1821220503966187520

In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process

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