In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process

• Main Authors: Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, H.-Y., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83839
• Institution: National University of Singapore

10.1109/VTSA.2011.5872217