Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology

Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology

10.1109/VLSI-TSA.2012.6210149

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Bibliographic Details
Main Authors: Gong, X., Zhu, Z., Kong, E., Cheng, R., Subramanian, S., Goh, K.H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84338
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84338

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