Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
10.1109/VLSI-TSA.2012.6210149
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84338 |
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| Institution: | National University of Singapore |