Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology

10.1109/VLSI-TSA.2012.6210149

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Bibliographic Details
Main Authors:	Gong, X., Zhu, Z., Kong, E., Cheng, R., Subramanian, S., Goh, K.H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84338
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84338
record_format	dspace
spelling	sg-nus-scholar.10635-843382015-01-07T09:58:51Z Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology Gong, X. Zhu, Z. Kong, E. Cheng, R. Subramanian, S. Goh, K.H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSI-TSA.2012.6210149 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - 2014-10-07T04:51:32Z 2014-10-07T04:51:32Z 2012 Conference Paper Gong, X.,Zhu, Z.,Kong, E.,Cheng, R.,Subramanian, S.,Goh, K.H.,Yeo, Y.-C. (2012). Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210149" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210149</a> 9781457720840 19308868 http://scholarbank.nus.edu.sg/handle/10635/84338 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSI-TSA.2012.6210149
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gong, X. Zhu, Z. Kong, E. Cheng, R. Subramanian, S. Goh, K.H. Yeo, Y.-C.
format	Conference or Workshop Item
author	Gong, X. Zhu, Z. Kong, E. Cheng, R. Subramanian, S. Goh, K.H. Yeo, Y.-C.
spellingShingle	Gong, X. Zhu, Z. Kong, E. Cheng, R. Subramanian, S. Goh, K.H. Yeo, Y.-C. Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
author_sort	Gong, X.
title	Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
title_short	Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
title_full	Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
title_fullStr	Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
title_full_unstemmed	Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
title_sort	ultra-thin-body in 0.7ga 0.3as-on-nothing n-mosfet with pd-ingaas source/drain contacts enabled by a new self-aligned cavity formation technology
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84338
_version_	1681089600144015360

Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology

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