New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

10.1109/VTSA.2011.5872238

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Bibliographic Details
Main Authors:	Koh, S.-M., Kong, E.Y.J., Liu, B., Ng, C.-M., Liu, P., Mo, Z.-Q., Leong, K.-C., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84010
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84010
record_format	dspace
spelling	sg-nus-scholar.10635-840102015-01-08T17:25:50Z New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs Koh, S.-M. Kong, E.Y.J. Liu, B. Ng, C.-M. Liu, P. Mo, Z.-Q. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2011.5872238 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 74-75 2014-10-07T04:47:45Z 2014-10-07T04:47:45Z 2011 Conference Paper Koh, S.-M.,Kong, E.Y.J.,Liu, B.,Ng, C.-M.,Liu, P.,Mo, Z.-Q.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 74-75. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2011.5872238" target="_blank">https://doi.org/10.1109/VTSA.2011.5872238</a> 9781424484928 http://scholarbank.nus.edu.sg/handle/10635/84010 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VTSA.2011.5872238
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Kong, E.Y.J. Liu, B. Ng, C.-M. Liu, P. Mo, Z.-Q. Leong, K.-C. Samudra, G.S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Koh, S.-M. Kong, E.Y.J. Liu, B. Ng, C.-M. Liu, P. Mo, Z.-Q. Leong, K.-C. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Kong, E.Y.J. Liu, B. Ng, C.-M. Liu, P. Mo, Z.-Q. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
author_sort	Koh, S.-M.
title	New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
title_short	New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
title_full	New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
title_fullStr	New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
title_full_unstemmed	New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
title_sort	new tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-finfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84010
_version_	1681089540659347456

New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

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