New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

• Main Authors: Koh, S.-M., Kong, E.Y.J., Liu, B., Ng, C.-M., Liu, P., Mo, Z.-Q., Leong, K.-C., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84010
• Institution: National University of Singapore

10.1109/VTSA.2011.5872238