New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

• Main Authors: Koh, S.-M., Kong, E.Y.J., Liu, B., Ng, C.-M., Liu, P., Mo, Z.-Q., Leong, K.-C., Samudra, G.S., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/84010

10.1109/VTSA.2011.5872238