Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors

10.1109/INEC.2011.5991711

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Bibliographic Details
Main Authors:	Da, H., Lam, K.-T., Samudra, G.S., Liang, G., Chin, S.-K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	device performance doping concentration graphene nanoribbon heterojunction tunneling field-effect transistors
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84206
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-842062024-11-13T21:21:53Z Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors Da, H. Lam, K.-T. Samudra, G.S. Liang, G. Chin, S.-K. ELECTRICAL & COMPUTER ENGINEERING device performance doping concentration graphene nanoribbon heterojunction tunneling field-effect transistors 10.1109/INEC.2011.5991711 Proceedings - International NanoElectronics Conference, INEC - 2014-10-07T04:50:01Z 2014-10-07T04:50:01Z 2011 Conference Paper Da, H.,Lam, K.-T.,Samudra, G.S.,Liang, G.,Chin, S.-K. (2011). Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/INEC.2011.5991711" target="_blank">https://doi.org/10.1109/INEC.2011.5991711</a> 9781457703799 21593523 http://scholarbank.nus.edu.sg/handle/10635/84206 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	device performance doping concentration graphene nanoribbon heterojunction tunneling field-effect transistors
spellingShingle	device performance doping concentration graphene nanoribbon heterojunction tunneling field-effect transistors Da, H. Lam, K.-T. Samudra, G.S. Liang, G. Chin, S.-K. Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
description	10.1109/INEC.2011.5991711
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Da, H. Lam, K.-T. Samudra, G.S. Liang, G. Chin, S.-K.
format	Conference or Workshop Item
author	Da, H. Lam, K.-T. Samudra, G.S. Liang, G. Chin, S.-K.
author_sort	Da, H.
title	Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
title_short	Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
title_full	Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
title_fullStr	Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
title_full_unstemmed	Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
title_sort	source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84206
_version_	1821233459074433024

Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors

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