Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors

Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors

10.1109/INEC.2011.5991711

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Bibliographic Details
Main Authors: Da, H., Lam, K.-T., Samudra, G.S., Liang, G., Chin, S.-K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
device performance
doping concentration
graphene nanoribbon
heterojunction
tunneling field-effect transistors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84206
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Institution: National University of Singapore

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