Strain engineering for hole mobility enhancement in P-channel field-effect transistors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
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sg-nus-scholar.10635-842272016-01-10T13:46:00Z Strain engineering for hole mobility enhancement in P-channel field-effect transistors Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 310-314 2014-10-07T04:50:15Z 2014-10-07T04:50:15Z 2004 Conference Paper Yeo, Y.-C. (2004). Strain engineering for hole mobility enhancement in P-channel field-effect transistors. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 310-314. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/84227 NOT_IN_WOS Scopus |
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International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. |
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Yeo, Y.-C. |
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Yeo, Y.-C. Strain engineering for hole mobility enhancement in P-channel field-effect transistors |
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Yeo, Y.-C. |
title |
Strain engineering for hole mobility enhancement in P-channel field-effect transistors |
title_short |
Strain engineering for hole mobility enhancement in P-channel field-effect transistors |
title_full |
Strain engineering for hole mobility enhancement in P-channel field-effect transistors |
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Strain engineering for hole mobility enhancement in P-channel field-effect transistors |
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Strain engineering for hole mobility enhancement in P-channel field-effect transistors |
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strain engineering for hole mobility enhancement in p-channel field-effect transistors |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84227 |
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