Strain engineering for hole mobility enhancement in P-channel field-effect transistors

Strain engineering for hole mobility enhancement in P-channel field-effect transistors

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

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Bibliographic Details
Main Author:	Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84227
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Institution:	National University of Singapore

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