Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering

10.1063/1.2430924

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Lo, G.-Q., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57026
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Institution: National University of Singapore