Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering

10.1063/1.2430924

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Lo, G.-Q., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57026
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57026
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spelling	sg-nus-scholar.10635-570262023-10-30T09:36:25Z Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering Toh, E.-H. Wang, G.H. Lo, G.-Q. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2430924 Applied Physics Letters 90 2 - APPLA 2014-06-17T03:01:23Z 2014-06-17T03:01:23Z 2007 Article Toh, E.-H., Wang, G.H., Lo, G.-Q., Chan, L., Samudra, G., Yeo, Y.-C. (2007). Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering. Applied Physics Letters 90 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2430924 00036951 http://scholarbank.nus.edu.sg/handle/10635/57026 000243582000083 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2430924
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Lo, G.-Q. Chan, L. Samudra, G. Yeo, Y.-C.
format	Article
author	Toh, E.-H. Wang, G.H. Lo, G.-Q. Chan, L. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Lo, G.-Q. Chan, L. Samudra, G. Yeo, Y.-C. Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
author_sort	Toh, E.-H.
title	Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
title_short	Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
title_full	Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
title_fullStr	Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
title_full_unstemmed	Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
title_sort	performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57026
_version_	1781781331420643328

Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering

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