Technology options for reducing contact resistances in nanoscale metal-oxide-semiconductor field-effect transistors

Technology options for reducing contact resistances in nanoscale metal-oxide-semiconductor field-effect transistors

10.1109/INEC.2013.6465975

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Bibliographic Details
Main Author: Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
contact resistance
interface
Schottky barrier height
series resistance
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84274
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84274

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