The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric

10.1149/1.2728796

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Bibliographic Details
Main Authors:	Li, M.-F., Shen, C., Yang, T., Chen, G., Huang, D.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84291
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-842912015-01-07T15:44:03Z The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric Li, M.-F. Shen, C. Yang, T. Chen, G. Huang, D. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2728796 ECS Transactions 6 3 167-183 2014-10-07T04:51:00Z 2014-10-07T04:51:00Z 2007 Conference Paper Li, M.-F.,Shen, C.,Yang, T.,Chen, G.,Huang, D. (2007). The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric. ECS Transactions 6 (3) : 167-183. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.2728796" target="_blank">https://doi.org/10.1149/1.2728796</a> 9781566775526 19385862 http://scholarbank.nus.edu.sg/handle/10635/84291 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1149/1.2728796
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Li, M.-F. Shen, C. Yang, T. Chen, G. Huang, D.
format	Conference or Workshop Item
author	Li, M.-F. Shen, C. Yang, T. Chen, G. Huang, D.
spellingShingle	Li, M.-F. Shen, C. Yang, T. Chen, G. Huang, D. The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric
author_sort	Li, M.-F.
title	The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric
title_short	The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric
title_full	The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric
title_fullStr	The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric
title_full_unstemmed	The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric
title_sort	physical origins of fast and slow components in nbti degradation for p-mos transistors with sion gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84291
_version_	1681089591561420800

The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric

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