The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectric

• Main Authors: Li, M.-F., Shen, C., Yang, T., Chen, G., Huang, D.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84291
• Institution: National University of Singapore

10.1149/1.2728796