Effect of (Bi,Gd)FeO3 layer thickness on the microstructure and electrical properties of BiFeO3 thin films
10.1111/j.1551-2916.2011.04633.x
Saved in:
Main Authors: | Wu, J., Wang, J., Xiao, D., Zhu, J. |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86266 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Resistive hysteresis in BiFeO3 thin films
by: Wu, J., et al.
Published: (2014) -
Structure and piezoelectric properties of BiFeO3 and Bi0.92Dy0.08FeO3 multiferroics at high temperature
by: Sun, Chen, et al.
Published: (2013) -
Mn4+:BiFeO3/Zn2+:BiFeO3 bilayered thin films of (1 1 1) orientation
by: Wu, J., et al.
Published: (2014) -
Improved ferroelectric and fatigue behavior of Bi0.95Gd 0.05FeO3/BiFe0.95Mn0.05O 3 bilayered thin films
by: Wu, J., et al.
Published: (2014) -
ZnO as a buffer layer for growth of BiFeO3 thin films
by: Wu, J., et al.
Published: (2014)