Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films

10.1103/PhysRevB.82.024102

Saved in:

Bibliographic Details
Main Authors:	Ke, Q., Lou, X., Wang, Y., Wang, J.
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/86622
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-86622
record_format	dspace
spelling	sg-nus-scholar.10635-866222023-10-25T22:54:59Z Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films Ke, Q. Lou, X. Wang, Y. Wang, J. MATERIALS SCIENCE AND ENGINEERING 10.1103/PhysRevB.82.024102 Physical Review B - Condensed Matter and Materials Physics 82 2 - PRBMD 2014-10-07T09:52:52Z 2014-10-07T09:52:52Z 2010-07-13 Article Ke, Q., Lou, X., Wang, Y., Wang, J. (2010-07-13). Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films. Physical Review B - Condensed Matter and Materials Physics 82 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.82.024102 10980121 http://scholarbank.nus.edu.sg/handle/10635/86622 000279818400002 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1103/PhysRevB.82.024102
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Ke, Q. Lou, X. Wang, Y. Wang, J.
format	Article
author	Ke, Q. Lou, X. Wang, Y. Wang, J.
spellingShingle	Ke, Q. Lou, X. Wang, Y. Wang, J. Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
author_sort	Ke, Q.
title	Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
title_short	Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
title_full	Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
title_fullStr	Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
title_full_unstemmed	Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
title_sort	oxygen-vacancy-related relaxation and scaling behaviors of bi 0.9la0.1fe0.98mg0.02o3 ferroelectric thin films
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/86622
_version_	1781784914733039616

Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films

Similar Items